单质直接气相生长ZnMgSe单晶

采用高纯Zn、Mg、Se2单质为原料,以NH4Cl作为反应输运剂,用化学气相输运(CVT)的方法一步成功生长出ZnMgSe单晶。通过XRD、RO-XRD、EDS、紫外可见分光光度计和光致发光(PL)技术研究了ZnMgSe晶体的结构、成份以及光学特性。结果表明:ZnMgSe单晶具有良好的结晶性能,在400～800 nm范围内透过率达到40%～50%,在2.2～2.6 eV范围内存在与深能级电子复合相关的发光带。研究证明由Zn、Mg、Se2单质在输运剂NH4Cl辅助下一步直接合成ZnMgSe单晶是可行的。

Growth of ZnMgSe Single Crystals by Chemical Vapor Transport Method

ZnMgSe single crystals were grown by chemical vapor transport(CVT) method in one step,using Zn,Mg and Se2 elements as the raw materials and NH4Cl as the transport agent.The as-grown ZnMgSe crystals were characterized by XRD,RO-XRD,EDS,UV-Vis spectrophotometer and photoluminescence(PL) for their structures,compositions and optical properties respectively.The results indicated that the as-grown ZnMgSe single crystals are well crystallized with the compositions close to ideal stoichiometric ratio.The transmittance reaches to 45%-50% in the wavelength range of 400-800 nm.Two emission bands were detected in the range of 2.2-2.5 eV,which can be attributed to electron recombination that take place through deep levels.The results prove feasibility of growing ZnMgSe single crystals in one step from Zn,Mg and Se2 with the assistance of NH4Cl transport agent.