射频磁控溅射生长ZnO薄膜及性能研究

采用射频磁控溅射技术在玻璃衬底生长ZnO及ZnO∶ Al薄膜,通过改变氩氧比、衬底温度和溅射功率获得样品.用X射线衍射仪、紫外-可见分光光度计、扫描电子显微镜进行表征.结果发现:室温下40W的溅射功率1h的溅射时间,改变氩氧比获得样品.XRD图谱中无明显衍射峰出现；紫外可见光分光光度计测试结果显示400nm波长以下,透光率在90;以上.说明薄膜生长呈无定形.衬底温度高于200℃样品,XRD有明显(002)衍射峰出现,在400～ 800 nm波长范围,透光率在88;以上,衬底温度300℃时,XRD衍射峰半高宽最小,晶粒尺寸大.TEM显示:衬底300℃晶粒尺寸最大,晶体发育好.在200℃掺铝ZnO薄膜,(002)峰不明显,有(101)峰出现.

Properties of ZnO Thin Film Grown by RF Magnetron Sputtering

Using the radio frequency reactive magnetron sputtering technique,ZnO and Al-dopped ZnO thin films were fabricated on glass substrate by changing the Ar/O2 ratio and substrate temperature.The film crystallinity,optical properties and surface morphology were investigated by X-ray diffraction,UV-visible spectrophotometer and scanning electron microscopy(SEM).The XRD results show that by changing the argon oxygen ratio,Al-dopped ZnO films deposited at sputtering power of 40 W and room temperature for 1 h sputtering time showed no significant peaks,suggesting that the film growth was amorphous.UV-Vis spectrophotometer at 400 nm wavelength test showed less than 90% light transmission rate.When substrate temperature was increased to 200 ℃,significant(002) diffraction peak and transmittance of 88% or more in the 400-800 nm wavelength range appeared.A minimum XRD diffraction peak FWHM was found at substrate temperature of 300 ℃.TEM show well crystal growth with maximum grain size at 300 ℃,XRD show that there are only(101) peaks,no(002) peaks in Al-doped ZnO.