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溶剂热法制备Al掺杂ZnO薄膜的机理研究
引用本文:马振辉,谷景华,张跃. 溶剂热法制备Al掺杂ZnO薄膜的机理研究[J]. 人工晶体学报, 2012, 41(1): 74-78
作者姓名:马振辉  谷景华  张跃
作者单位:北京航空航天大学材料科学与工程学院,北京,100191
基金项目:中央高校基本科研业务费专项资金资助
摘    要:采用溶剂热法在玻璃衬底上制备Al掺杂的ZnO薄膜,研究了溶剂热过程中升温、恒温和降温三个阶段分别对薄膜物相和形貌的影响,探讨了薄膜的生长机理.结果表明,升温阶段只是形核过程,基片仅在升温阶段与前驱液接触不能形成薄膜;基片在升温-恒温阶段与前驱液接触可制备(002)择优取向的薄膜;恒温阶段既有成核过程又有晶体生长过程,基片仅在恒温阶段与前驱液接触可以制备薄膜;降温阶段薄膜继续生长.

关 键 词:ZnO薄膜  Al掺杂  溶剂热  机理,

Study on Growth Mechanism of Al Doped ZnO Films Prepared by Solvothermal Method
MA Zhen-hui , GU Jing-hua , ZHANG Yue. Study on Growth Mechanism of Al Doped ZnO Films Prepared by Solvothermal Method[J]. Journal of Synthetic Crystals, 2012, 41(1): 74-78
Authors:MA Zhen-hui    GU Jing-hua    ZHANG Yue
Affiliation:(School of Materials Science and Engineering,Beihang University,Beijing 100191,China)(Received 25 October 2011,accepted 15 November 2011)
Abstract:Aluminum doped zinc oxide(AZO) films were prepared by solvothermal method on glass substrates.The effects of heating,temperature holding and cooling stages on the phase and morphology of AZO films were investigated.The growth mechanism of AZO films was studied.The results indicated that only nucleation takes place at heating stage.There was no film deposited when the substrates contacted with precursor only at heating stage.AZO films obtained on the substrates contacting with precursor at both heating and temperature holding stages show(002) preferred orientation.Both nucleation and crystal growth take place at temperature holding stage.AZO films can be deposited on the substrates contacting with precursor only at temperature holding stage.AZO films continue slowly to grow at cooling stage.
Keywords:ZnO film  Al-doped  solvothermal  mechanism
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