电化学共沉积法制备GaAs纳米结构薄膜及表征

以含一定比例Ga与As2O3的酸性溶液(pH=2.5)作为前驱溶液,以Pt片为对电极,饱和甘汞电极(SCE)为参比电极,室温下利用三电极电化学站在Ti衬底上恒压沉积GaAs薄膜.然后对GaAs薄膜进行退火处理.利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM),以及荧光光度计(PL)分别对不同沉积电压下所制备的薄膜的晶体结构,薄膜形貌以及光学性能进行分析表征.结果表明:沉积电压以及退火过程对GaAs薄膜的形貌、晶体结构、薄膜质量有很大影响,所制备的GaAs薄膜退火前晶化程度较低,部分粒子表现出不均匀团聚.光致发光峰为红光发射,且单色性好.退火后的GaAs薄膜为面心立方晶型,呈纳米颗粒状,薄膜的光电性能明显提高.

Characterization of Nano GaAs Thin Film Prepared by Electrodeposition Method

By potentiostatic electeodeposition method,using the precursor aqueous solution(pH=2.5) containing gallium and arsenic oxide in proper ratios as electrolyte,GaAs film was successfully fabricated at room temperature.This electrosynthesis was processed on the Ti piece substrate with Pt piece as the counter electrode,SCE as the reference electrode.The crystal structure,morphology and photoelectric properties of the films deposited at different deposition voltage was characterized by XRD,FESEM and PL.The results showed that deposition voltage,annealing process have great effect on the morphology crystal structure and film quality of the GaAs thin films.The PL spectra of the samples showed the fluorescence phenomenon with better monochromaticity.The appropriated deposition voltage selection plays an important role in the surface morphology and quality for the thin films.Slowly annealing at low temperature has certain effect on GaAs crystal phase,while the crystal form is apparent cubic phase,the photoelectric properties of the films are obviously improved.