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Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique |
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| Authors: | Hyeong-Gon Kang Y. -H. Im Seokcheol Ko Sung-Hun Lim B. -S. Han Y. B. Hahn |
| Affiliation: | a Semiconductor Physics Research Center, Chonbuk National University, 664-14 Duckjin-Dong, Chonju 561-756, South Korea b Focus Center-New York, Rensselaer: Interconnections for Gigascale Integration, Rensselaer Polytechnic Institute, USA c School of Electronics and Information Engineering, Chonbuk National University, Chonju 561-756, South Korea d School of Chemical Engineering, Chonbuk National University, 664-14 Duckjin-Dong, Chonju 561-756, South Korea |
| Abstract: | Superconducting flux flow transistors (SFFT) was successfully fabricated by an inductively coupled plasma (ICP) etching technique. YBaCuO thin films on LaAlO3 substrate were patterned as a three-terminal device by a conventional wet etching method and the ICP system. The characteristics of a fabricated device were investigated by examining the I–V curves under various applied currents. The control current dependence of the transresistance was also measured. The SFFT with a channel fabricated by the ICP system showed a transistor-like characteristic over the liquid nitrogen temperature. |
| Keywords: | SFFT ICP Transresistance I–V curves |
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