Energy band gap and oscillator parameters of Ga4Se3S single crystals |
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| Authors: | AF Qasrawi NM Gasanly |
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| Institution: | a Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey
b Department of Physics, Middle East Technical University, 06531 Ankara, Turkey |
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| Abstract: | The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively. |
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| Keywords: | 71 23 An 71 55 Cn 72 10 Di 72 20 Dp 72 20 Nr |
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