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Optical properties of p-type ZnO doped by lithium and nitrogen |
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| Authors: | X.H. Wang B. Yao D.Z. Shen B.H. Li Y.M. Lu J.Y. Zhang L.X. Guan |
| Affiliation: | a Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, PR China b Graduate School of Chinese Academy of Sciences, Beijing 100039, PR China c Department of Physics, Jlin University, Changchun, 130023, PR China |
| Abstract: | A lithium and nitrogen doped p-type ZnO (denoted as ZnO: (Li, N)) film was prepared by RF-magnetron sputtering and post annealing techniques with c-Al2O3 as substrate. Its transmittance was measured to be above 95%. Three dominant emission bands were observed at 3.311, 3.219 and 3.346 eV, respectively, in the 80 K photoluminescence (PL) spectrum of the p-type ZnO:(Li, N), and are attributed to radiative electron transition from conduction band to a LiZn-N complex acceptor level (eFA), radiative recombination of a donor-acceptor pair and recombination of the LiZn-N complex acceptor bound exciton, respectively, based on temperature-dependent and excitation intensity-dependent PL measurement results. The LiZn-N complex acceptor level was estimated to be about 126 meV above the valence band by fitting the eFA data obtained in the temperature-dependent PL spectra. |
| Keywords: | 71.55.Gs 78.20.-e |
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