氮化铝单晶薄膜的ECR PEMOCVD低温生长研究

采用电子回旋共振等离子体增强金属有机物化学气相沉积（ECR－PEMOCVD）技术，在c轴取向的蓝宝石即α Al2O3（0001）衬底上，以氮化镓（GaN）缓冲层和外延层作为初始层，分别以高纯氮气（N2）和三甲基铝(TMAl)为氮源和铝源低温生长氮化铝（AlN）薄膜.并利用反射高能电子衍射（RHEED）、原子力显微镜（AFM）和x射线衍射（XRD）等测量结果，研究了氢等离子体清洗、氮化和GaN初始层对六方AlN外延层质量的影响，从而获得解理性与α Al2O3衬底一致的六方相AlN单晶薄膜，其XRD半高宽为1 关键词： AlN 氢等离子体清洗 氮化 GaN

Study on low-temperature growth of AlN single crystal film by ECR-PEMOCVD

The AlN film with GaN initial layer (GaN buffer layer and epilayer)has been grown on α Al2O3 (0001)substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR PEMOCVD) technique at low temperatures using TMAl and high pure N2 as Al and N sources, respectively. The effects of hydrogen plasma cleaning, nitridation and GaN inital layer on the quality of AlN epilayer have been investigated by RHEED(reflection high energy electron diffraction) , TEM(transmission electron microscope) and XRD(x ray diffraction). And high quality hexagonal phase AlN single crystal films whose cleavability is the same as the substrate have been grown at low temperatures. The full width at half maximum of XRD peaks is 12′.