Nanopolishing of silicon wafers using ultrafine-dispersed diamonds

In the present study, two new methods are proposed for the polishing of silicon wafers using ultrafine-dispersed diamonds (UDDs). The first proposed polishing method uses a polishing tool with an ultrafine abrasive material made through the electrophoretic deposition of UDDs onto a brass rod. Dry polishing tests showed that the surface roughness of the silicon wafer was reduced from R_a=107 to 4 nm after polishing for 30 min. The second method uses a new polishing pad with self-generating porosity. By polishing with the new pad in combination with the polycrystalline UDD in a water suspension, it is possible to achieve the specified surface roughness of the silicon wafer much faster than when using a conventional pad made of foamed polyurethane. The tests showed that the surface roughness of the silicon wafer was reduced from R_a=107 to 2 nm after polishing for 90 min.