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Temperature dependence of electroresistance for La0.67Ba0.33MnO3 manganite |
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| Authors: | Rajesh Kumar Ajai K. Gupta Vijay Kumar Neeraj Khare |
| Affiliation: | a National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India b Department of Physics and Astrophysics, University of Delhi, Delhi 11007, India c Department of Physics, Indian Institute of Technology, New Delhi 110016, India |
| Abstract: | The influence of dc biasing current on temperature dependence of resistance of La0.67Ba0.33MnO3 bulk sample is reported. A decrease in the resistance (electroresistance) on the application of higher bias current is observed. The electroresistance is maximum at metal-insulator transition temperature (TMI) and decreases when the temperature is either increased or decreased from TMI. A two-phase model is proposed to explain the occurrence of electroresistance. The higher bias current leads to an increase in alignment of spins and thus, in turn, leads to an increase in spin stiffness coefficient and decrease in the resistance at TMI. |
| Keywords: | A. Magnetic materials A. Oxides D. Electrical properties |
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