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Single-electron charging of triangular quantum dots in a ring interferometer
Authors:V. A. Tkachenko  A. A. Bykov  D. G. Baksheev  O. A. Tkachenko  L. V. Litvin  A. V. Latyshev  T. A. Gavrilova  A. L. Aseev  O. Estibals  J. C. Portal
Affiliation:(1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia;(2) Grenoble High Magnetic Fields Laboratory, MPI-FKF and CNRS, B.P. 166, F-38042 Grenoble, France
Abstract:Small-size semiconductor ring interferometers operating in the Coulomb blockade regime have been experimentally and theoretically studied. The conductance as a function of the gate voltage exhibits narrow quasiperiodic peaks, which are further split into doublets. Based on the experimental structural data, a three-dimensional electrostatic potential, the energy spectrum, and the single-electron transport in the interferometer were modeled. The electron system can be divided into two triangular quantum dots connected by single-mode microcontacts to each other and to the reservoirs. A model of quantum dot charging in this system is proposed that explains the appearance of doublets in the conductance-gate voltage characteristics.
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