Infrared and Raman spectroscopy of particle-beam induced damage of silicon carbide

The damaging of 6H-SiC by ion implantation (Ar⁺, 320 keV) leads to the formation of a light-absorbing surface layer with a thickness of about 0.4 μm and a dielectric function which indicates a disordering of the crystal structure. Raman spectra show the existence of amorphous carbon, silicon and silicon carbide. Ion bombardment with 1.4 MeV He⁺ ions generates a 3 μm thick surface layer with small lattice distortions and light-absorbing centers and a 0.4 μm thick interface layer with a larger refractive index.