Characterization and luminescence of a-Si:H:Cl films |
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| Authors: | G. Fortunato F. Evangelisti G. Bruno P. Capezzuto F. Cramarossa V. Augelli R. Murri |
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| Affiliation: | Istituto di Fisica “G. Marconi”, Università di Roma, Rome, Italy;Centro di Studio per la Chimica dei Plasmi del CNR, Istituto di Chimica Generale e Inorganica dell''Università, Bari, Italy;Istituto di Fisica dell''Università, Bari, Italy |
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| Abstract: | ![]()
a-Si:H:Cl films have been deposited by glow-discharge and characterized by infrared transmission, optical absorption and photoluminescence. The influence of growth parameters on the H and Cl content has been investigated. The luminescence spectra show that three different radiative transitions can occur, at 0.75, 0.95 and ～1.3 eV. These bands have been interpreted respectively in terms of the following recombinations: defect to defect, defect to band tail, band tail to band tail. |
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