In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams |
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Authors: | A Ebbers D Reuter M Heuken A D Wieck |
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Institution: | a Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780, Bochum, Germany;b Aixtron AG, 52072, Aachen, Germany |
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Abstract: | Focused ion beam implantation of gallium and dysprosium was used to locally insulate the near-surface two-dimensional electron gas of AlxGa1−xN/GaN heterostructures. The threshold dose for insulation was determined to be 2×1010 cm−1 for 90 keV Ga+ and 1×109 cm−1 for 200 keV Dy2+ at 4.2 K. This offers a tool not only for inter-device insulation but also for direct device fabrication. Making use of “open-T” like insulating line patterns, in-plane gate transistors have been fabricated by focused ion beam implantation. An exemplar with a geometrical channel width of 1.5 μm shows a conductance of 32 μS at 0 V gate voltage and a transconductance of around 4 μS, which is only slightly dependent on the gate voltage. |
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Keywords: | In-plane gate Insulation Focused ion beams |
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