Determination of Silicon Impurities in High-Purity Arsenic Using Atomic Emission Spectrometry with Matrix Distillation from a Tipped Electrode |
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| Authors: | V G Pimenov D V Lukin A V Bondarenko V S Mikheev |
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| Institution: | (1) Institute of High-Purity Substances, Russian Academy of Sciences, ul. Tropinina 49, Nizhni Novgorod, 603950, Russia |
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| Abstract: | A procedure for analyzing high-purity arsenic by atomic emission spectrometry (AES) was proposed that provides the preconcentration of silicon and other nonvolatile impurities in a crater of a graphite electrode using matrix distillation from 2-g sample portions as As2O3 . The procedure is characterized by a low correction for the blank experiment. The detection limit for silicon was 4 × 10–7 wt %. |
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