An Analytical Three-Region Two-Dimensional Model for SiGe MOSFETs Operating at Millimeter Wave Frequencies期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

An Analytical Three-Region Two-Dimensional Model for SiGe MOSFETs Operating at Millimeter Wave Frequencies

Authors:	S.K. Islam V. Srinivasan F.C. Jain

Affiliation:	(1) Electrical & Computer Engineering Department, University of Tennessee, Knoxville, Tennessee 37996-2100, USA;(2) Electrical & Computer Engineering Department, 260 Glenbrook Road U-157, Storrs, Connecticut 06269-2157, USA

Abstract:	An analytical two-dimensional model for an n-channel SiGe MOSFET is presented. In this paper a three-region model for SiGe is developed. The space charge region under the gate has been divided into three regions and the two-dimensional potential distribution is found by choosing appropriate boundary conditions for the drain, source and depletion regions. The analytical model predicts unity current-gain cut-off frequency (f_T) of a 0.5 m SiGe MOSFET to be over 18.6 GHz.

Keywords:
本文献已被 SpringerLink 等数据库收录！