Measurements of residual stress in semi-insulating GaAs by Cr-related luminescence lines

We have measured systematically the Cr-related zero-phonon lines in the 0.839 eV region in a series of plastically-bent semi-insulating GaAs:Cr with compressive or tensile stress along various bending axes. As a result, it has been found that the residual stress in semi-insulating GaAs:Cr wafers can be sensitively characterized from a splitting and energy shift of the 0.839 eV Cr-related luminescence lines in the low-temperature photoluminescence spectra. Furthermore, we have applied this method to the characterization of the interface stress of OMVPE-grown ZnSe/GaAs:Cr heterostructure and found that anomalous stress exists at the ZnSe/GaAs interface, which is inconsistent with stress predicted by the lattice mismatch of the heterojunctions.