Role of defects in magnetic properties of Fe-doped SnO2 films fabricated by the Sol--Gel method |
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Authors: | Zhou Xue-Yun Ge Shi-Hui Han Xiu-Feng Zuo Ya-Lu Xiao Yu-Hu Wen Zhen-Chao Zhang Li and Li Ming-Jie |
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Institution: | [1]Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China [2]State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract: | This paper obtains the room temperature ferromagnetism in Sn1-xFexO2 films fabricated by the Sol--Gel method. X-ray
diffraction results show that Fe doping inhibits the growth of
SnO2 and Fe3+ ions occupy the Sn sites. The
measurement of resistance excludes the free carrier inducing
ferromagnetism. Moreover, the temperature dependence of
magnetization has been better fitted by the Curie--Weiss law and bound
magnetic polaron (BMP) theory. An enhancement of ferromagnetism is
achieved by annealing the samples with x=7.1% in H2, and a
decrease of oxygen flow rate. All these results prove that the BMP
model depending on defects can explain ferromagnetism in diluted
magnetic oxides. |
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Keywords: | diluted magnetic oxides BMP
model defects |
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