| 2～4μm波长的InAsPSb异质结激光管材料的液相外延 |
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| 引用本文： | 王永珍,金长春.2～4μm波长的InAsPSb异质结激光管材料的液相外延[J].发光学报,1994,15(4):327-331. |
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| 作者姓名： | 王永珍 金长春 |
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| 作者单位： | 中国科学院长春物理研究所, 长春 130021 |
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| 摘 要： | 采用液相外延方法,生长出外延层与衬底之间的失配度△α/α≤1.6×10-3界面平直、组分恒定的InAsPSb/InAs外延晶体.单异质结外延层,得到了3.09μm波长的激光输出,双异质结外延片也得到了较好的伏-安特性曲线.
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| 关 键 词： | 2～4μm InAsPSb/InAs 液相外延 |
| 收稿时间： | 1994-03-29 |
LIQUID PHASE EPITAXIAL GROWTH OF InASPSb/InAS HETEROJUNCTION FOR LASER DIODE IN THE 2-4μmWAVELENGTH REGION |
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| Wang Yongzhen, Jin Changchun, Lu Guijin.LIQUID PHASE EPITAXIAL GROWTH OF InASPSb/InAS HETEROJUNCTION FOR LASER DIODE IN THE 2-4μmWAVELENGTH REGION[J].Chinese Journal of Luminescence,1994,15(4):327-331. |
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| Authors: | Wang Yongzhen Jin Changchun Lu Guijin |
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| Institution: | Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021 |
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| Abstract: | Quaternary InAsPSb epitaxial layers have been directly grown on InAs substrate using liquid phase epitaxy(LPE)techniques.Some properties of InAsPSb/InAs were investigated.I-V characterstics of P-N junction consist of P-InAsPSb and N-InAs substrate were given at 300K and 77K.The epitaxial layers were lattice mismatch to InAs about 1.6×10-3.The diodes were driven by current pulsesob of 10μs duration and 500Hz-5kHz pulses/s repetition.The laser emission with wavelength 3.09μm was observed from single heterojunction made of P-InAs0.82P0.12Sb0.06 and N-InAs substrate at 12K. |
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| Keywords: | m InAsPSb/InAs LPEReceived 29 March 1994 |
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