InSb纳米线阵列的可控制备与光谱表征

采用脉冲电沉积结合阳极氧化铝模板技术制备了不同生长方向的闪锌矿型InSb纳米线阵列. 结果表明, 控制电解液中十二烷基硫酸钠(SDS)的浓度, 可使纳米线的择优生长方向从400]向220]方向转变. 利用X射线衍射仪、 场发射扫描电子显微镜、 高分辨透射电子显微镜对所制备纳米线的相组成和微结构进行了表征. 激光拉曼光谱结果表明, 不同生长方向的InSb纳米线阵列的拉曼光谱有明显差异. 与体材料相比, InSb纳米线阵列的红外吸收声子散射峰发生强烈红移, 其吸收带边发生了明显蓝移.

Controlled Fabrication and Spectral Characterization of InSb Nanowire Arrays†

Zinc-blende-type InSb nanowire arrays with different growth orientations were synthesized in porous anodic alumina membrane by pulse electrodeposition. It is found that the growth orientation of InSb nanowires changes from 400] to 220] direction by controlling the concentration of sodium dodecyl sulfate(SDS) in the electrolyte. The phases and microstructure of the obtained nanowires were analyzed using powder X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy. The laser Raman spectra of the InSb nanowire arrays grown along different directions show distinctly different Raman features. Compared with the bulk materials, the phonon scattering peaks of the InSb nanowire arrays are severely red-shifted while its corresponding absorption band is blue-shifted.