Temperature dependence of high field transport in ZnS

High field transport process in ZnS in the temperature range of (10–500) K was simulated by help of Monte Carlo method. The band structure of ZnS is described by analytical fitting of real band structure. Phonon scattering, spatial charge scattering, and impact ionization process are included in the simulation. The phonon scattering rates at different temperatures are calculated and compared. The transient acceleration time of electrons in ZnS is found to be temperature-independent. We attribute this result to the compensation of two opposite factors in ZnS. Average energy of electrons decreases with temperature.