Muon trapping and diffusion in Al and In after electron irradiation at 9 K |
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Authors: | N Haas D Herlach W Jacobs H -J Mundinger J Rosenkranz H -E Schaefer M Schmolz A Seeger K -P Döring K Fürderer M Gladisch |
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Institution: | 1. Institut für Physik, Max-Planck-Institut für Metallforschung, Postfach 800665, D-7000, Stuttgart 80, Fed. Rep. of Germany 2. Institut für Theoretische und Angewandte Physik, Universit?t Stuttgart, Pfaffenwaldring 57, D-7000, Stuttgart 80, Fed. Rep of Germany 3. Physikalisches Institut Universit?t Heidelberg, Philosophenweg 12, D-6900, Heidelberg 1, Fed. Rep. of Germany
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Abstract: | The transverse spin relaxation of positive muons has been measured on an Al single crystal and on polycrystalline In after
irradiation with 2 MeV electrons at 9 K or 11 K, sample transfer at 4.2 K, and various subsequent annealing treatments. The
Al data are analysed in terms of diffusion-limited trapping by vacancies. This yields a muon diffusivityD
μ which within experimental accuracy is proportional toT between 4 K and 50 K, indicating that in this temperature intervalD
μ is dominated by one-phonon-assisted incoherent tunnelling. In In only very small effects due to the irradiation could be
observed. The muons appear to be localized in octahedral interstices. From the motional averaging taking place above about
20 K the diffusivity ofD
μ in In is deduced. |
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