Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy |
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| Authors: | Nicoleta Doriana Banu Ionut Banu Banu Marios S Katsiotis Anjana Tharalekshmy Samuel Stephen Jamie Whelan Gisha Elizabeth Luckachan Radu Vladea Saeed M Alhassan |
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| Institution: | 1.Department of Chemical Engineering,The Petroleum Institute,Abu Dhabi,United Arab Emirates;2.Centre for Organic Chemistry “C.D. Nenitescu”, Romanian Academy,Bucharest,Romania;3.Department of Chemical and Biochemical Engineering,University Politehnica of Bucharest,Bucharest,Romania;4.Department of Chemistry,New York University Abu Dhabi,Abu Dhabi,United Arab Emirates |
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| Abstract: | Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM. |
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