Electrical characteristics of Pt-ZnO Schottky nano-contact |
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| Authors: | SHAO ZhengZheng ZHANG XueAo WANG XiaoFeng & CHANG ShengLi Center of Materials Science College of Science National University of Defense Technology Changsha China |
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| Institution: | SHAO ZhengZheng,ZHANG XueAo,WANG XiaoFeng & CHANG ShengLi Center of Materials Science,College of Science,National University of Defense Technology,Changsha 410073,China |
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| Abstract: | The electrical characteristics of Pt-ZnO Schottky nano-contact have been studied. Well aligned ZnO nanorod arrays were synthesized by two-step wet-chemical method. A Pt-coated conducting probe of atomic force microscope was placed on the head face of the ZnO nanorod, thereby forming a Pt-ZnO nano-contact. The I-V characteristic curve shows that the Pt-ZnO nano-contact exhibits rectifying effect, like a Schottky diode with an ideality factor of 3.2 and a reverse-bias breakdown voltage more than -10 V. The st... |
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| Keywords: | ZnO nanorod Schottky contact ideality factor |
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