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Voltage-Gated Metal-Enhanced Fluorescence II: Effects of Fluorophore Concentration on the Magnitude of the Gated-Current
Authors:Anatoliy I. Dragan  Yongxia Zhang  Chris D. Geddes
Affiliation:(1) Institute of Fluorescence, Laboratory for Advanced Medical Plasmonics, and Laboratory for Advanced Fluorescence Spectroscopy, Medical Biotechnology Center, University of Maryland Biotechnology Institute, 725 West Lombard St, Baltimore, MD 21201, USA
Abstract:
In this letter we report further findings on the ability of an applied direct current to modulate Metal-Enhanced Fluorescence (MEF). Fluorophores in close-proximity to just-continuous silver films (JCS) show significantly enhanced fluorescence intensities. However, when a current is applied to the films, the enhanced fluorescence can be gated in a manner that depends on both the fluorophore concentration, the magnitude of the applied current and the extent of the protein mono to multi-layer surface coverage. Our results are consistent and indeed further support our previous hypothesis and model that fluorophore-metal near-field interactions can be influenced by an applied direct current.
Keywords:Metal-Enhanced fluorescence  Surface-Enhanced fluorescence  Radiative decay engineering  Plasmon controlled fluorescence  Surface plasmons  Mirror dipole  Near-Field effects  Voltage-gated fluorescence
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