Voltage-Gated Metal-Enhanced Fluorescence II: Effects of Fluorophore Concentration on the Magnitude of the Gated-Current |
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Authors: | Anatoliy I. Dragan Yongxia Zhang Chris D. Geddes |
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Affiliation: | (1) Institute of Fluorescence, Laboratory for Advanced Medical Plasmonics, and Laboratory for Advanced Fluorescence Spectroscopy, Medical Biotechnology Center, University of Maryland Biotechnology Institute, 725 West Lombard St, Baltimore, MD 21201, USA |
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Abstract: | In this letter we report further findings on the ability of an applied direct current to modulate Metal-Enhanced Fluorescence (MEF). Fluorophores in close-proximity to just-continuous silver films (JCS) show significantly enhanced fluorescence intensities. However, when a current is applied to the films, the enhanced fluorescence can be gated in a manner that depends on both the fluorophore concentration, the magnitude of the applied current and the extent of the protein mono to multi-layer surface coverage. Our results are consistent and indeed further support our previous hypothesis and model that fluorophore-metal near-field interactions can be influenced by an applied direct current. |
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Keywords: | Metal-Enhanced fluorescence Surface-Enhanced fluorescence Radiative decay engineering Plasmon controlled fluorescence Surface plasmons Mirror dipole Near-Field effects Voltage-gated fluorescence |
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