The temperature dependence of the conductivity and thermal emf due to multiphonon hopping in disordered semiconductors

Using transport theory, we studied the temperature dependence of the static conductivity and of the thermal emf due to multiphonon hopping in disordered semiconductors. In the low-temperature region when T <_m (_m is the maximum phonon frequency), the temperature dependences of the conductivity and the thermal emf are the same as when single-phonon hopping is dominant. At higher temperatures (T _m), the hopping conductivity and thermal emf are characterized by a slower dependence on reciprocal temperature than in the low-temperature region.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No.2, pp.42–47, February, 1976.The author is to V. L. Bonch-Bruevich and A. G. Mironov for discussing this work.