| Ripening of single-layer InGaAs islands on GaAs（001） |
| |
| 作者姓名： | 刘珂 周清 周勋 郭祥 罗子江 王继红 胡明哲 丁召 |
| |
| 作者单位： | a College of Science, Guizhou University, Guiyang 550025, China;b School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China;c School of Education Administration, Guizhou University of Finance and Economics, Guiyang 550004, China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 60866001 and 61076049);the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. (2007) 03);the Foundation of Guizhou Provincial Science and Technology Department (Grant No. QKH-J[2007]2176);the Special Assistant to the High-Level Personnel Research Projects of Guizhou Provincial Committee,Organization Department(Grant No. TZJF-200610);the Doctorate Foundation of the Education Ministry of China (Grant No. 20105201110003);the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. Z103233);Special Governor Fund for Outstanding Professionals in Science & Technology and Education of Guizhou Province (Grant No. 2009114);the Innovation Funds for Graduates of Guizhou University (Grant No. LG2012019) |
| |
| 摘 要： | The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy(STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.
|
| 关 键 词： | InGaAs GaAs（001） 岛屿 成熟 扫描隧道显微镜 退火时间 单层 表面形态 |
| 收稿时间： | 2012-06-19 |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
