Resonant Raman scattering in germanium and zincblende-type semiconductors temperature dependence

We have measured the resonance in the Raman scattering near the E₁ gaps of InAs and of a Ge_0.77 Si_0.23 alloy at 77, 300 and 594°K. In contrast to the E₁ gap determined in absorption and transmission measurements, the coresponding peak in the spectral dependence of the scattering cross section shifts very little with temperature; it occurs at all temperatures very near the energy of the absorption peak measured at low temperatures (∼ 77°K).