A new charge-correction method in X-ray photoelectron spectroscopy

The 2p_{$\text{3}\text{2}$} binding energy (242.3 eV) of Ar implanted in insulating materials is available to correct for charging shifts. Argon ions hav materials SiO₂ and soda glass. In each case the charging shift for Ar 2p_{$\text{3}\text{2}$} electrons agrees exactly with those for core-level elec The charge-corrected binding energies of the insulating materials permit the identification of atomic chemical states. Ion-induced reduction of the ins investigations.