Polarization of hot photoluminescence in GaAs/AlAs superlattices |
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| Authors: | V. F. Sapega V. I. Perel’ A. Yu. Dobin D. N. Mirlin I. A. Akimov T. Ruf M. Cardona K. Eberl |
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| Affiliation: | 1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
2. Max-Planck-Institut für Festk?rperforschung, Stuttgart, Germany
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| Abstract: | The polarization characteristics of hot photoluminescence in GaAs/AlAs superlattices are investigated experimentally and theoretically. It is shown that the formation of an electronic miniband in the superlattice substantially changes the polarization characteristics of the photoluminescence. As a result of the quasi-three-dimensional character of the motion of hot electrons in the superlattice, the polarization depends on the ratio of the electron kinetic energies in the plane of the superlattice and along the axis of the superlattice. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 4, 285–289 (25 February 1996) |
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