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Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral <Emphasis Type="Italic">C</Emphasis>-<Emphasis Type="Italic">V</Emphasis> measurement |
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| Authors: | A É Atamuratov D U Matrasulov P K Khabibullaev |
| Institution: | (1) Urgench State University, Urgench, 740000, Uzbekistan;(2) Heat Physics Department, Academy of Sciences of Uzbekistan, Tashkent, 700135, Uzbekistan |
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