Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD |
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Authors: | Jian Sun Kuanjun Peng Lu Zhu Zuofu Hu Qian Dai Xiqing Zhang and Yongsheng Wang |
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Institution: | Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Opto-Electronic Technology, Beijing Jiaotong University, Beijing 100044, China |
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Abstract: | We fabricate an ultraviolet photodetector based on a blend of poly (N-vinylcarbazole) (PVK) and 2- tert-butylphenyl-5-biphenyl-1, 3, 4-oxadiazole (PBD) using spin coating. The device exhibites a low dark current density of 2.2×10 3 μA/cm 2 at zero bias. The spectral response of the device shows a narrow bandpass characteristic from 300 to 355 nm, and the peak response is 18.6 mA/W located at 334 nm with a bias of –1 V. We also study the performances of photodetectors with different blend layer thicknesses. The largest photocurrent density is obtained with a blend of 90 nm at the same voltage. |
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