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Quantitative analysis of boron profiles in silicon using ion microprobe mass spectrometry |
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| Authors: | M. Croset |
| Affiliation: | (1) Laboratoire Central de Recherches, Corbeville par Orsay, France |
| Abstract: | Single crystal silicon samples of various boron concentrations are studied using an ion microprobe. Argon and oxygen ion beams are used for the scanning and the determination of the boron profiles. Erosion rates are discussed. |
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