Infrared hole burning in matrix-isolated 1,2-difluoroethane with a tunable diode laser

Infrared hole burning within the absorption profile of the ν₁₇ vibrational transition of 1,2-difluoroethane matrix-isolated in solid Ar, Kr, and N₂ was observed. These measurements allowed the determination of the homogeneous and inhomogeneous linewidth ($\text{Δ}\text{ν}\text{?}{}_{\mathrm{<mtext>h</mtext>}}\text{= 0.002}\text{cm}{}^{\mathrm{?1}}$ at 2.5 K in Kr, $\text{Δ}\text{ν}\text{?}{}_{\mathrm{<mtext>i</mtext>}}\text{= 0.25}\text{cm}{}^{\mathrm{?1}}$). The temperature dependence of the homogeneous linewidth is explained in terms of vibrational relaxation as well as dephasing processes. A detailed analysis of the changes in the absorption profile with irradiation and calculation of the potential energy surface for rotation of the molecule in the matrix cage suggest a reorientation of the molecules in the matrix to be the cause of the observed hole burning.