Raman scattering of light by optical phonons in Si-Ge-Si structures with quantum dots |
| |
| Authors: | A B Talochkin V A Markov S P Suprun A I Nikiforov |
| |
| Institution: | (1) Institute of Semiconductor Physics, Siberian Branch of the, Russian Academy of Sciences, 630090 Novosibirsk, Russia |
| |
| Abstract: | Raman scattering of light by optical phonons in Si-Ge-Si structures with pseudomorphic germanium quantum dots has been investigated.
Resonance amplification of the scattering intensity on E
0 (Γ7−Γ8) transitions has been observed. It is shown that as a result of the formation of the layer of germanium quantum dots, the
resonance energy is ∼0.3 eV higher than in the two-dimensional case.
Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 203–207 (10 August 1996) |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
