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Theoretical study on reaction mechanism of the vinyl radical with nitrogen atom
Authors:Yang Sun  Qi-yuan Zhang  Xi-cheng Ai  Jian-ping Zhang  Chia-chung Sun
Institution:

aThe State Key Laboratory for Structural Chemistry of Unstable and Stable Species, The Center for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, People's Republic of China

bInstitute of Theoretical Chemistry, Jilin University, Changchun 130023, People's Republic of China

Abstract:The complex triplet potential energy surface of the C2H3N system is investigated at the UB3LYP and CCSD(T) (single-point) levels in order to explore the possible reaction mechanism of C2H3 radical with N(4S). Eleven minimum isomers and 18 transition states are located. Possible energetically allowed reaction pathways leading to various low-lying dissociation products are obtained. Starting from the energy-rich reactant C2H3+N(4S), the first step is the attack of the N atom on the C atom having one H atom attached in C2H3 radical and form the intermediate C2H3N(1). The associated intermediate 1 can lead to product P1 CH2CN+H and P2 3CH2+3HCN by the cleavage of C–H bond and C–C bond, respectively. The most favorable pathway for the C2H3+N(4S) reaction is the channel leading to P1, which is preferred to that of P2 due to the comparative lower energy barrier. The formation of P3 3C2H2+3NH through hydrogen-abstraction mechanism is also feasible, especially at high temperature. The other pathways are less competitive comparatively.
Keywords:Potential energy surface  Vinyl radical  Isomers
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