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Magnetic pole pinning at rectangular defects on MnAs/GaAs(0 0 1)
Authors:H Kuramochi  J Okabayashi  F Takano  M Mizuguchi  T Manago  H Akinaga  
Institution:

a Research Consortium for Synthetic, Nano-Function Materials Project (SYNAF), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

b Seiko Instruments, Inc., 36-1 Takenoshita, Oyama-cho, Sunto-gun, Shizuoka 410-1393, Japan

c The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

d Nanotechnology Research Institute (NRI), AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Abstract:Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(Image  1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs.
Keywords:Magnetic measurements  Atomic force microscopy  Magnetic phenomena (cyclotron resonance  phase transitions  etc  )  Manganese  Arsenic  Gallium arsenide  Metal–semiconductor magnetic thin film structures
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