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Studying the Mode-Spectra Characteristics of An Above-Threshold Biased Semiconductor Laser
引用本文:XIA Guangqiong, WU Zhengmao,CHEN Jianguo, LU Yucun(Optoelectronics Department,Sichuan University,Chengdu 610064,China). Studying the Mode-Spectra Characteristics of An Above-Threshold Biased Semiconductor Laser[J]. Chinese Journal of Lasers, 1994, 3(1): 11-16
作者姓名:XIA Guangqiong   WU Zhengmao  CHEN Jianguo   LU Yucun(Optoelectronics Department  Sichuan University  Chengdu 610064  China)
作者单位:Optoelectronics Department,Sichuan University,Chengdu 610064,China
摘    要:
StudyingtheMode-SpectraCharacteristicsofAnAbove-ThresholdBiasedSemiconductorLaser¥XIAGuangqiong;WUZhengmao;CHENJianguo;LUYucu...

收稿时间:1993-11-08

Studying the Mode-Spectra Characteristics of An Above-Threshold Biased Semiconductor Laser
XIA Guangqiong, WU Zhengmao,CHEN Jianguo, LU Yucun. Studying the Mode-Spectra Characteristics of An Above-Threshold Biased Semiconductor Laser[J]. 中国激光(英文版), 1994, 3(1): 11-16
Authors:XIA Guangqiong   WU Zhengmao  CHEN Jianguo   LU Yucun
Abstract:
With ray trace method, the expression of the photon density of various laser diode modes inside the cavity has been derived. After summing up the photon densities, an analytical expression for the carrier deficit △N from the nominal threshold carrier density N_(th) of an above-threshold biased semiconductor laser has been deduced. With the aid of the derived expression, analytical studies have been made on both the mode spectra and the mode suppression ratio of a semiconductor laser. Experiments have been designed to measure the dependence of the mode suppression ratio on the wavelength difference between the gain peak and its nearest cavity mode of the semiconductor laser. The results have confirmed the theoretical predictions.
Keywords:semiconductor laser   ray trace method   mode suppression ratio   carrier density
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