Electrophysical properties of ionic alloys of GaAs obtained by implanting Zn+ (150 keV) with subsequent annealing at 500–1000°C 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Electrophysical properties of ionic alloys of GaAs obtained by implanting Zn+ (150 keV) with subsequent annealing at 500–1000°C

摘要：
收稿时间：	28 February 1978
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