| Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate |
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| 引用本文： | 王公堂,薛成山,杨兆柱.Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate[J].中国物理 B,2008,17(4):1326-1330. |
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| 作者姓名： | 王公堂 薛成山 杨兆柱 |
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| 作者单位： | College of Physics and Electronics, Shandong Normal
University, Jinan 250014, China;College of Physics and Electronics, Shandong Normal
University, Jinan 250014, China;College of Physics and Electronics, Shandong Normal
University, Jinan 250014, China |
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| 基金项目： | Project supported
by the State Key Program of the National Natural Science Foundation
of China (Grant No 90201025). |
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| 摘 要： | This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.
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| 关 键 词： | 氧化镓纳米棒 硅基底 氨化处理 薄膜生长 |
| 收稿时间： | 2007-10-11 |
Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate |
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| Wang Gong-Tang,Xue Cheng-Shan and Yang Zhao-Zhu.Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate[J].Chinese Physics B,2008,17(4):1326-1330. |
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| Authors: | Wang Gong-Tang Xue Cheng-Shan and Yang Zhao-Zhu |
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| Institution: | College of Physics and Electronics, Shandong Normal
University, Jinan 250014, China |
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| Abstract: | This paper reports that β-Ga2O3 nanorods have been
synthesized by ammoniating Ga2O3 films on a V middle layer
deposited on Si(111) substrates. The synthesized nanorods were
confirmed as monoclinic Ga2O3 by x-ray diffraction, Fourier
transform infrared spectra. Scanning electron microscopy and
transmission electron microscopy reveal that the grown
β-Ga2O3 nanorods have a smooth and clean surface with
diameters ranging from 100nm to 200\,nm and lengths typically up to
2\mum. High resolution TEM and selected-area electron diffraction
shows that the nanorods are pure monoclinic Ga2O3 single
crystal. The photoluminescence spectrum indicates that the
Ga2O3 nanorods have a good emission property. The growth
mechanism is discussed briefly. |
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| Keywords: | β--Ga2O3 nanorods vapour--solid mechanism V |
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