CVD-derived Hf-based High-k Gate Dielectrics |
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Authors: | Gang He Bin Deng Zhaoqi Sun Xiaoshuang Chen Yanmei Liu Lide Zhang |
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Institution: | 1. School of Physics and Materials Science , Anhui University , Hefei , P. R. China;2. National Laboratory for Infrared Physics, Chinese Academy of Sciences , Shanghai Institute of Technical Physics , Shanghai , P. R. China;3. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei , P. R. China |
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Abstract: | Hf-based high-k gate dielectric has been recently highlighted as the most promising high-k dielectrics for the next-generation CMOS devices with high performance due to its excellent thermal stability and relatively high dielectric constant. This article provides a comprehensive view of the state-of-the-art research activities in advanced Hf-based high-k gate dielectrics grown by chemical-vapor-deposition-based method, including metal-organic-chemical-vapor-deposition (MOCVD), atomic-layer-chemical-vapor-deposition (ALCVD), and plasma-enhanced- chemical-vapor-deposition (PECVD), in CMOS device. We begin with a survey of methods developed for generating Hf-based high-k gate dielectrics. After that, most attention has been paid to the detailed discussion of the latest development of novel Hf-based high-k gate dielectrics grown by CVD. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This article explores the possible influences of research breakthroughs of Hf-based gate dielectrics on the current and future applications for nano-MOSFET devices. |
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Keywords: | high-k Hf-based gate dielectrics CMOS devices CVD thermal stability |
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