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Structural and optical studies of the discontinuous behaviour of Te thin films subjected to He implantation
Authors:J. Beauvais  R. A. Lessard  P. Galarneau  E. J. Knystautas
Affiliation:(1) Centre d'Optique Photonique et Laser, Départment de Physique, Université Laval, Cité Universitaire, G1K 7P4, Québec, Canada;(2) Institut National d'Optique, 369 rue Franquet, G1V 4C5 Ste-Foy, Québec, Canada
Abstract:
Electron microscopy investigations of tellurium thin films implanted with singly ionized He ions have revealed the appearance of a large number of surface structures when Ns, the number of implanted ions per unit area within the films, exceeds 0.2×1015 ions/cm2 at a beam energy of 32 keV. This coincides with an observed discontinuity in the optical properties of the Te thin films and with a sudden decrease in the degree of orientation of the thin films as measured by X-ray diffraction. The same type of behaviour is observed for implantations with variable ion-beam energies and a fixed Ns of 0.5×1015 He ions/cm2, with a discontinuity apparent near a value of 30 keV.
Keywords:42.30Nt  78.65Jd  61.70Tm
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