Structural and optical studies of the discontinuous behaviour of Te thin films subjected to He implantation |
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Authors: | J. Beauvais R. A. Lessard P. Galarneau E. J. Knystautas |
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Affiliation: | (1) Centre d'Optique Photonique et Laser, Départment de Physique, Université Laval, Cité Universitaire, G1K 7P4, Québec, Canada;(2) Institut National d'Optique, 369 rue Franquet, G1V 4C5 Ste-Foy, Québec, Canada |
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Abstract: | Electron microscopy investigations of tellurium thin films implanted with singly ionized He ions have revealed the appearance of a large number of surface structures when Ns, the number of implanted ions per unit area within the films, exceeds 0.2×1015 ions/cm2 at a beam energy of 32 keV. This coincides with an observed discontinuity in the optical properties of the Te thin films and with a sudden decrease in the degree of orientation of the thin films as measured by X-ray diffraction. The same type of behaviour is observed for implantations with variable ion-beam energies and a fixed Ns of 0.5×1015 He ions/cm2, with a discontinuity apparent near a value of 30 keV. |
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Keywords: | 42.30Nt 78.65Jd 61.70Tm |
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