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Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO
作者姓名:翁臻臻  张健敏  黄志高  林文雄
作者单位:Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences College of Physics and Information Engineering,Fuzhou University School of Physics and OptoElectronics Technology,Fujian Normal University
基金项目:Project supported by the National Key Project for Basic Research of China (Grant No. 2005CB623605), the Fund of National Engineering Research Center for Optoelectronic Crystalline Materials (Grant No. 2005DC105003) and the National Natural Science Foundation of China (Grant No. 60876069).
摘    要:The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations.It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO.The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom.The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.

关 键 词:Co-doped  ZnO  oxygen  vacancy  ferromagnetism
收稿时间:2010-07-25

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO
Weng Zhen-Zhen,Zhang Jian-Min,Huang Zhi-Gao and Lin Wen-Xiong.Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO[J].Chinese Physics B,2011,20(2):27103-027103.
Authors:Weng Zhen-Zhen  Zhang Jian-Min  Huang Zhi-Gao and Lin Wen-Xiong
Institution:Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;School of Physics and OptoElectronics Technology, Fujian Normal University, Fuzhou 350007, China;School of Physics and OptoElectronics Technology, Fujian Normal University, Fuzhou 350007, China;Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
Abstract:The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations. It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO. The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom. The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.
Keywords:Co-doped ZnO  oxygen vacancy  ferromagnetism
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