蓝宝石衬底上Gd2O3掺杂CeO2氧离子导体电解质薄膜的生长及电学性能

采用反应磁控溅射方法，在(0001)蓝宝石单晶衬底上，制备了纳米多晶Gd₂O₃掺杂CeO₂(GDC)氧离子导体电解质薄膜，采用X射线衍射仪(XRD)、原子力显微镜(AFM)对薄膜物相、结构、粗糙度、表面形貌等生长特性进行了表征，利用交流阻抗谱仪测试了GDC薄膜不同温度下的电学性能；实验结果表明，GDC薄膜为面心立方结构，在所研究的衬底温度范围内，均呈强(111)织构生长；薄膜表面形貌随衬底温度发生阶段性变化：衬底温度由室温升高到300℃时， 关键词： 2O₃掺杂CeO₂电解质薄膜')" href="#">Gd₂O₃掺杂CeO₂电解质薄膜 反应磁控溅射 生长特性 电学性能

Growth and electrical conductivity of Gd2O3 doped CeO2 ion conductor electrolyte film on sapphire substrate

Nanocrystalline Gd₂O₃ doped CeO₂ (abbreviated as GDC) ion conductor electrolyte thin films synthesized by reactive magnetron sputtering on (0001) sapphire substrates have been characterized by X-ray diffraction (XRD)，atomic force microscopy (AFM) and AC impedance analysis. The results show that，the f.c.c structured GDC films have strong (111) textures at all the substrate temperatures of our investigation while the surface morphology varied with the temperature. Small, round growth islands transform to large prismatic islands at temperatures from room temperature to 300℃, and the reverse process occurr at temperatures from 400℃ to 700℃. This morphology change characterizing different nucleation mechanisms at the beginning of film growth is probably due to transformation of the surface structure of the (0001) sapphire at different temperatures. The AC impedance complex plane plot of the GDC film is mainly determined by grain boundary resistances. The conductivity activation energy (1.2—1.5eV) calculated by the Arrhenius plot is close to the reported value for the grain boundary conductivity and decreases with rising substrate temperature (E_a300E_a400E_a600). Difference in activation energy and grain size for GDC films causes unequal increasing rates of electrical conductivity at higher temperatures.