| 锗硅量子阱中近带边光跃迁的理论和实验研究 |
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| 引用本文： | 董文甫 谢小刚. 锗硅量子阱中近带边光跃迁的理论和实验研究[J]. 发光学报, 1996, 17(4): 311-316 |
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| 作者姓名： | 董文甫 谢小刚 |
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| 作者单位： | 1. 集成光电子学国家联合实验室半导体所实验区, 中国科学院物理研究所, 北京 100083;2. 中国科学院半导体研究所, 北京 100080 |
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| 摘 要： | 本文研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型。用此模型计算了光跃迁偶极矩,给出了跃迁偶极矩的上限。提出了未掺杂SiGe/Si量子阱中近带边光跃迁的一种跃迁机制,认为是Ge原子周围波函数畸变的集体行为。用MBE方法生长了掺杂SiGe/Si量子阱材料,在低温下观测到近带边光跃迁。
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| 关 键 词： | SiGe/Si量子阱 光跃迁 |
| 收稿时间： | 1996-02-28 |
THE THEORETICAL AND EXPERIMENTAL RESEARCH OF THE NEAR-BAND-GAP OPTICAL TRANSITION IN SiGe/Si QUANTUM WELL |
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| Dong Wenfu Wang Qiming Yang Qinqing. THE THEORETICAL AND EXPERIMENTAL RESEARCH OF THE NEAR-BAND-GAP OPTICAL TRANSITION IN SiGe/Si QUANTUM WELL[J]. Chinese Journal of Luminescence, 1996, 17(4): 311-316 |
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| Authors: | Dong Wenfu Wang Qiming Yang Qinqing |
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| Affiliation: | 1. National Integrated Opto-Electronics laboratory Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;2. Institute of Physics, Chinese Academy of Sciences Beijing 100080 |
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| Abstract: | The mechanism of the near-band-gap optical transition in doped SiGe/Si quantum well is investigated, and the model of the near-band-gap optical transition originated from the statistical distribution of the impurities is suggested. The dipole matrix elements of the transition are calculated based on this model and the upper limits of the dipole matrix elements are also calculated. The mechanism of the near-band-gap optical transition in undoped SiGe/Si quantum well is also suggested that it is the collective action of the deformation wavefunction around Ge atoms. The samples of doped SiGe/Si quantum well have been grown using a molecular beam epitaxy (MBE) system and the near-band-gap optical transition from these samples was observed at low temperatures. |
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| Keywords: | SiGe/Si quantum well optical transition |
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