Crystal Engineering of BiVO4 for Photochemical Sensing of H2S Gas at Ultra-low Concentration |
| |
| Authors: | Fei Zhao Chuanzhe Wang Rui Xiong Yanfeng Dai Prof Baisheng Sa Prof Can Yang Prof Gang Xu Prof Xinchen Wang |
| |
| Institution: | 1. State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou, Fujian, 350116 P. R. China;2. State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China;3. Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian, 350116 P. R. China |
| |
| Abstract: | We report a photochemical bismuth vanadate (BiVO4) sensing material, which possesses a large proportion of (110) and (011) facets combined with the additional (111) facets, for the selective detection of ultra-low concentration hydrogen sulfide (H2S) driven by visible light. Specifically, the obtained octadecahedron BiVO4 (Octa-BiVO4) performs a high response value (67) and short response time (47.4 s) to 100 ppm H2S with good stability for nearly 100 days, as well as undisturbedness by moist air. With the combination of experimental and theoretical calculation results, the adsorption and carrier transfer behaviors of H2S molecules on the Octa-BiVO4 crystal surface are investigated. By adjusting the ratio of different crystal facets and controlling the facets with characteristic adsorption, we achieve improved anisotropic photoinduced carrier separation and high selectivity for a specific gas. Furthermore, this facial facet engineering can be extended to the synthesis of other sensing materials, offering huge opportunities for fundamental research and technological applications. |
| |
| Keywords: | Bismuth Vanadate Electrical Devices Facet Engineering Gas Sensing Photoactivation |
|
|
