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Surface gap and surface electronic states in CuGeO3 single crystal |
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| Authors: | V. Corradini A. Goldoni F. Parmigiani C. Kim A. Revcolevschi L. Sangaletti U. del Pennino |
| Affiliation: | a Istituto Nazionale per la Fisica della Materia, Dipartimeno di Fisica dell' Università di Modena, Via Campi 213/a, 41100 Modena, Italy b Sincrotrone Trieste S.C.p.A., s.s. 14 Km 163.5 in Area Science Park, 34012 Trieste, Italy c Istituto Nazionale per la Fisica della Materia, Dipartimento di Matematica e Fisica, Università Cattolica, Via Trieste 17, 25121 Brescia, Italy d Department of Applied Physics and Stanford Synchrotron Radiation Laboratories, Stanford University, 94305-4055 Stanford, CA, USA e Laboratoire de Chimie des Solides, Unité Associe au CNRS 446, Université de Paris-Sud, Batiment 414, F-91405 Orsay Cedex, France f Facoltà di Ingegneria, Università di Brescia, Via Valotti 9, 25121 Brescia, Italy |
| Abstract: | The surface and bulk electronic excitations of CuGeO3 are investigated by means of electron energy loss and polarized X-ray absorption spectroscopy. CuGeO3 shows a surface charge transfer gap of about 3.0±0.3 eV. The unoccupied oxygen derived density of states, as probed by X-ray absorption at the O 1s edge, is in good agreement with recent many-body calculations. |
| Keywords: | CuGeO3 Electron spectroscopy Surface electronic structure |
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