Endor of a dislocation center in a deformed silicon |
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| Authors: | V.A. Grazhulis,V.V. Kveder,Yu.A. Osip&#x yan,Y.H. Lee,R.L. Kleinhenz,H. Van Camp,C.P. Scholes,J.W. Corbett |
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| Affiliation: | Institute of Solid State Physics of the Academy of Sciences of the USSR, Chernogolovka, Moscow District, USSR;Institute for the Study of Defects in Solids, SUNY/Albany, Albany, New York 12222, USA |
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| Abstract: | ![]()
We present the first ENDOR measurements on dislocations in silicon, which measurements directly show the extended nature of the electron wave function on the dislocation. |
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