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Pulsed nanosecond annealing of magnesium-implanted silicon |
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| Authors: | N G Galkin S V Vavanova K N Galkin R I Batalov R M Bayazitov V I Nuzhdin |
| Institution: | 1. Institute for Automation and Control Processes, Far East Branch, Russian Academy of Sciences, ul. Radio 5, Vladivostok, 690041, Russia 3. Far Eastern Federal University, Fontannaya ul. 24, Vladivostok, 690900, Russia 2. Zavoisky Physical Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Sibirskii Tract 10/7, Kazan, 420029, Russia |
| Abstract: | Single-crystalline silicon is implanted by magnesium ions at room temperature and then subjected to pulsed ion-beam annealing. The surface morphology, crystallinity, and optical properties of the implanted silicon are studied before and after annealing. It is shown that ion implantation makes a near-surface layer of silicon about 0.1 m thick amorphous. Pulsed nanosecond ion-beam annealing results in silicon recrystallization and the formation of crystalline magnesium silicide precipitates. Optimal values of the implantation dose and pulse energy density for the formation of magnesium silicide precipitates in the near-surface layer of silicon are found. |
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