Anisotropic Voigt effect in n-type silicon |
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| Affiliation: | 1. School of Power and Energy, Northwestern Polytechnical University, Xi''an 710072, Shaanxi, China;2. Shandong Institute of Advanced Technology, Jinan 250100, Shandong, China;3. School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China;1. Instituto Politécnico Nacional, Laboratorio de Electroquímica y Corrosión, AIP-ESIQIE-IPN, UPALM, Zacatenco, C.P. 07738, Ciudad de Mexico, Mexico;2. Departamento de Ingeniería Química, Industrial y de Alimentos, Universidad Iberoamericana, Prolongación Paseo de la Reforma 880, Lomas de Santa Fe, Ciudad de México, C.P. 01219, Mexico;3. Laboratorio de Catálisis y Materiales, Instituto Politécnico Nacional, UPALM, Zacatenco, CP. 07738, Ciudad de Mexico, Mexico;4. Centro de Nanociencias y Micro y Nanotecnologías, Instituto Politécnico Nacional, UPALM, Zacatenco, CP. 07738, Ciudad de Mexico, Mexico |
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| Abstract: | Donovan and Webster have studied the free-carrier Voigt effect, valid for all frequencies and magnetic-field strengths, taking into account multiple reflections in n-type germanium semiconductors. This theory is now extended to the case of n-type silicon. The high-frequency magneto-conductivity tensors are derived for a nondegenerate system of electrons, considering lattice scattering only. Theoretical calculations for Voigt rotation are carried out for a typical non-degenerate specimen of n-type silicon having d.c. conductivity α0 = 1.8 × 1011 e.s.u. (at 300 K). |
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